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| BD533/5/7 BD534/6/8 COMPLEMENTARY SILICON POWER TRANSISTORS s BD534, BD535, BD536, BD537 AND BD538 ARE SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The BD533, BD535, and BD537 are silicon epitaxial-base NPN power transistors in Jedec TO-220 plastic package, intented for use in medium power linear and switching applications. The complementary PNP types are BD534, BD536, and BD538 respectively. TO-220 1 2 3 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter NPN PNP V CBO V CES V CEO V EBO I C, I E IB P t ot T stg Tj Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector and Emitter Current Base Current Total Dissipation at T c 25 C o Value BD533 BD534 45 45 45 BD535 BD536 60 60 60 5 8 1 50 -65 to 150 150 BD537 BD538 80 80 80 Uni t V V V V A A W o o Storage Temperature Max. O perating Junction Temperature C C For PNP types voltage and current values are negative. June 1997 1/4 BD533/BD534/BD535/BD536/BD537/BD538 THERMAL DATA R t hj-ca se R t hj- amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 2.5 70 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CBO Parameter Collector Cut-off Current (IE = 0) Collector Cut-off Current (V BE = 0) Emitter Cut-off Current (I C = 0) Test Cond ition s for BD533/534 for BD535/536 for BD537/538 for BD533/534 for BD535/536 for BD537/538 V EB = 5 V I C = 100 mA for BD533/534 for BD535/536 for BD537/538 I B = 0.2 A I B = 0.6 A V CE = 2 V V CE = 5 V for BD533/534 for BD535/536 for BD537/538 V CE = 2 V V CE = 2 V for BD533/534 for BD535/536 for BD537/538 V CE = 1 V 20 20 15 40 25 25 15 3 12 MHz 45 60 80 0.8 0.8 1.5 V CB = 45 V V CB = 60 V V CB = 80 V V CE = 45 V V CE = 60 V V CE = 80 V Min. Typ . Max. 100 100 100 100 100 100 1 Un it A A A A A A mA V V V V V V I CES I EBO V CEO(sus ) Collector-Emitter Sustaining Voltage (IB = 0) V CE(sat ) V BE h FE Collector-Emitter Saturation Voltage Base-Emitter Voltage DC Current G ain IC = 2 A IC = 6 A IC = 2 A I C = 10 mA I C = 500 mA IC = 2 A fT Transition frequency I C = 500 mA Pulsed: Pulse duration = 300 s, duty cycle 1.5 % For PNP types voltage and current values are negative. Safe Operating Areas 2/4 BD533/BD534/BD535/BD536/BD537/BD538 TO-220 MECHANICAL DATA DIM. MIN. A C D D1 E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 DIA. 13.0 2.65 15.25 6.2 3.5 3.75 0.49 0.61 1.14 1.14 4.95 2.4 10.0 16.4 14.0 2.95 15.75 6.6 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147 4.40 1.23 2.40 1.27 0.70 0.88 1.70 1.70 5.15 2.7 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 0.645 0.551 0.116 0.620 0.260 0.154 0.151 mm TYP. MAX. 4.60 1.32 2.72 MIN. 0.173 0.048 0.094 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 inch TYP. MAX. 0.181 0.051 0.107 P011C 3/4 BD533/BD534/BD535/BD536/BD537/BD538 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada- China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A . .. 4/4 |
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